IGBT Module for High Efficiency in Parallel and Series Systems IGBT Module 1200V Manufacturer

• Customization: Available
• Application: Power Electronic Components, IGBT Module
• Batch Number: 2023+
• Model NO.: IGBT Module
• Certification: CE
• Manufacturing Technology: Discrete Device
• Material: Power Semiconductor
• Model: IGBT Module
• Package: Mount
• Signal Processing: Digital
• Type: IGBT Module
• Install: Parallel, Series
• Selling Units: Single Item
• Description: IGBT Module
• Delivery Time: 3-5 Workdays
• Transport Package: Standard
• Specification: W62*L107*H31 mm
• Trademark: PowerPassion
• Origin: China
• HS Code: 8504409190
• Production Capacity: 60000pieces/Year

Product Description

Product Description

HCG100FS120E1B

VcES=1200V,Ic (nom)=100A

Features

Low inductive design

Low Vcesat with high junction temperature
Fast &soft reverse recovery anti-parallel FWD
Low Switching Losses

Benefits

Higher System Efficiency

Reduce  cooling  requirements
Increased power density
Enabling higher frequency

Applications

Inverter for motor drive

AC and DC servo drive amplifier

Uninterruptible power supply

Absolute Maximum Ratings

Tc=25ºC unless otherwise noted

IGBT-inverter
Symbol	Parameter			Value			Unit
VcES	Collector-Emitter Voltage			1200			V
VGES	Gate-Emitter Voltage			±20			V
'Ic	Collector Current @T=25°ºC,Ty;=150°ºC			100			A
IcM	Pulsed Collector Current tp=1ms			200			A
Diodeinverter
Symbol	Parameter			Value			Unit
VRRM	Repetitive Peak Reverse Voltage			1200			V
IF	Diode Continuous Forward Current			100			A
IFM	Diode Maximum Forward Current tp=1ms			200			A

 

 

Product Parameters

IGBT-inverter Characteristics Tc=25ºC unless otherwise noted
Symbol	Parameter	Min.	Typ.	Max.	Unit	Test Conditions
VCEsat)	Collector to Emitter Saturation Voltage		1.70	2.15	V	Ic=100A,VGE=15V,Tj=25C
			1.95			Ic=100A,VGE=15VTj=125C
			2.0			Ic=100A,VGE=15V,Tj=150C
VGE(h)	Gate-Emitter Threshold Voltage	5.2	6.0	6.8	V	Ic=2.4mA,VCE=VGE, T=25C
IcES	CollectorCut-Off Current			1.0	mA	VcE=VcES,VGE=0V, Tj=25C
IGES	Gate-Emitter Leakage Current			400	nA	VGE=VGES,VGE=0V,Tj=25C
Eon	Tum-On Switching Energy	--	5.90	--	mJ	Vcc=600V,Ic100A, RG=2.2Ω,VGE=±15V, T=25C
Eo	Tum Off Switching Energy	--	6.05	---
tdlon)	Turn-on Delay Time	---	170	--	ns
tr	Turn-on Rise Time	--	32	--
tdrof)	Turn-off Delay Time	--	360	--
tr	Turn-off Fall Time	--	86	--
Isc	SC Data		500		A	tP≤10μs,VGE=15V,Tj=125C, Vcc=900V,VCEM≤1200V
RthJC	Thermal resistance,junction to case		0.293		KW	per IGBT
RthCH	Thermal resistance,case to heatsink		0.190		KW	per IGBT
Tvjop	Temperature under switching conditions	-40		150	ºC
Diode-inverter Characteristics Tc=25ºC unless otherwise noted
Symbol	Parameter	Min.	Typ.	Max.	Unit	Test Conditions
VF	Diode Forward Voltage		1.70	2.15	V	Ic=100A,VGE=0V,Tj=25C
			1.65			IF=100A,VGE=0V,Tj=125C
			1.65			IF=100A,VGE=0V,Tj=150C
Qr	Recovered Charge	---	9.0	--	μC	VR=600V,IF=100A, -di/dt=2500Aus,VGE=-15V Tj=25C
/RM	Peak Reverse Recovery Current	--	110	-	A
Erec	Reverse Recovery Energy	--	3.32	--	mJ
RthC	Thermal resistance,junction to case		0.505		KW	per DIODE
RinCH	Thermal resistance,case to heatsink		0.327		KW	per DIODE
Tyjop	Temperature under switching conditions	-40		150	ºC

NTC-Thermistor Characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

R25

Rated Resistance

TNTC=25ºC

5.0

kΩ

B25150

B-value

R=R25exp[B2550(1/T2- 1/(298,15K))]

3380

K

B 25180

B-value

R=R25exp[B25/Bo(1/T2- 1/(298,15K))

3435

K

Package

Symbol

Parameter

Test Conditions

Values

Unit

VISOL

Isolation test voltage

RMS,f=50Hz,t=1min

2.5

kV

dcreep

Creepage distance

10.0

mm

dclear

Clearance

7.5

mm

CTI

Comparative trackingndex

>200

LsCE

Stray inductance module

60

nH

Tst

Storage temperature

-40~125

ºC

M

Mounting torque for module      mounting

M5,Screw

3~6

Nm

G

Weight

200

0

Detailed Photos

 

related products

 

Certifications

Company Profile

COMPANY EQUIPMENT: Our state-of-the-art equipment reflects our dedication to quality and innovation, ensuring that every product meets the highest standards of excellence.

We have our own equipment, our own warehouse, imported raw materials si, monocrystalline silicon, and aluminum profiles: Our extensive resources and premium materials, including monocrystalline silicon and aluminum profiles, empower us to drive innovation and maintain unmatched quality.

Packaging & Shipping

FAQ

• 1. Do you provide after-sales service?

  Of course, we offer comprehensive after-sales service. If you encounter any issues with our products during use, please feel free to contact us, and we will do our best to solve your problems. Within the warranty period, if there are any quality issues with the product, we will replace or repair it for free.

• 2. How can I place an order for your thyristor products?

  You can place an order by consulting our sales staff online, sending a purchase order to our email, or calling our order hotline directly.

• 3. Do you provide samples, and how is the charging handled?

  For low-value standard products, we can provide free samples for testing, but the customer is responsible for the shipping costs. High-value product samples come with a discount, which can be discussed on a case-by-case basis.

• 4. Do you have SCR Power Regulators products in stock?

  We have some conventional models in stock. For specific inventory, please consult our sales staff. For non-stock products, our delivery time is usually 15-30 days.

• 5. How can one determine if a thyristor is damaged?

  You can determine if a thyristor is damaged by checking if there are any anomalies in its forward and reverse blocking voltages. If so, the thyristor may be damaged. For specific products, please consult an engineer for detailed numerical reference and guidance.